DocumentCode
811120
Title
Threshold Voltage Shift Due to Mechanical Stress-Enhanced Plasma Process-Induced Damage in 0.13- 
pMOSFET
Author
Li, Rui ; Kong, Wei-Ran ; Tao, Kai ; Yu, Liu-Jiang ; Huang, Kevin ; Ning, Jiang ; Geng, Chun-Qi ; Wang, Ching-Dong
Author_Institution
Shanghai Inst. of Microsystem & Inf. Technol., Chinese Acad. of Sci., Shanghai
Volume
28
Issue
5
fYear
2007
fDate
5/1/2007 12:00:00 AM
Firstpage
360
Lastpage
362
Abstract
Mechanical stress-enhanced plasma process-induced damage (PPID) in 0.13-mum pMOSFET was investigated. The PPID, which was initially charged neutral, became positively charged during hydrogen annealing, thus, changing the PMOS threshold voltage (Vth). Different device structures were designed to evaluate the mechanical stress effects on PPID. The features of these positive charges, including the PPID induced Vth shift, and its channel length dependence were also investigated
Keywords
MOSFET; annealing; plasma applications; 0.13 micron; PMOS threshold voltage; channel length dependence; hydrogen annealing; mechanical stress; pMOSFET; plasma process induced damage; positive oxide charge; threshold voltage shift; Annealing; CMOS process; CMOS technology; Hydrogen; MOSFET circuits; Plasma applications; Plasma devices; Plasma temperature; Stress; Threshold voltage; Hydrogen anneal; mechanical stress; plasmaprocess-induced damage (PPID); positive oxide charge; threshold voltage shift;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2007.894644
Filename
4160029
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