Title :
High efficiency microwave diode oscillators
Author :
Javalagi, S. ; Reddy, Veerababu ; Gullapalli, Krishna
Author_Institution :
Texas Univ., Austin, TX, USA
Abstract :
Data on the operation of very high efficiency microwave oscillators using AlAs/InGaAs quantum well injection transit (QWITT) diodes are presented. A DC-to-RF power conversion efficiency as high as 50% was achieved, which, to the authors´ knowledge, is the highest efficiency reported for continuous wave (CW) operation of a two terminal semiconductor device.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; microwave oscillators; semiconductor diodes; solid-state microwave circuits; transit time devices; 50 percent; AlAs-InGaAs; CW operation; DC-to-RF power conversion efficiency; QWITT diode; microwave diode oscillators; two terminal semiconductor device;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921080
