DocumentCode :
811178
Title :
Detection of Border Trap Density and Energy Distribution Along the Gate Dielectric Bulk of High- 
Gated MOS Devices
Author :
Lu, Chun-Yuan ; Chang-Liao, Kuei-Shu ; Lu, Chun-Chang ; Tsai, Ping-Hung ; Wang, Tien-Ko
Author_Institution :
Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu
Volume :
28
Issue :
5
fYear :
2007
fDate :
5/1/2007 12:00:00 AM
Firstpage :
432
Lastpage :
435
Abstract :
A novel charge-pumping (CP) technique is demonstrated to extract border-trap distribution for high- kappa gated MOSFETs. The varying-frequency CP method is shown to be more effective than the varying-amplitude one for probing border traps and extending the tunneling depth. A linear relationship of the Qcp versus ln(T rTf)1/2 plot can only be maintained at the CP frequency of 1 MHz, while not below 1 MHz, due to the influence of border traps near HfOxNy/Si interface. The proposed technique, which takes into consideration the effect of carrier tunneling in slow oxide traps, is used successfully to obtain the spatial and energy dependence of bulk trap density in high-kappa bulk
Keywords :
MOSFET; carrier density; hafnium compounds; high-k dielectric thin films; interface states; silicon; tunnelling; 1 MHz; HfON-Si; border trap density; bulk trap density; carrier tunneling effect; depth profile; energy distribution; gate dielectric bulk; high-K gated MOSFET; slow oxide traps; varying-frequency charge-pumping technique; Charge pumps; Dielectric devices; Frequency; Hafnium oxide; MOS devices; MOSFETs; Rapid thermal annealing; Semiconductor films; Silicon; Tunneling; $hbox{HfO}_{x}hbox{N}_{y}$ $(Q_{ rm cp})$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2007.895379
Filename :
4160034
Link To Document :
