Single-event effects in avionics

Author

Normand, Eugene

Author_Institution

Boeing Defense & Space Group, Seattle, WA, USA

Volume

43

Issue

2

fYear

1996

fDate

4/1/1996 12:00:00 AM

Firstpage

461

Lastpage

474

Abstract

The occurrence of single-event upset (SEU) in aircraft electronics has evolved from a series of interesting anecdotal incidents to accepted fact. A study completed in 1992 demonstrated that SEUs are real, that the measured in-flight rates correlate with the atmospheric neutron flux, and that the rates can be calculated using laboratory SEU data. Once avionics SEU was shown to be an actual effect, it had to be dealt with in avionics designs. The major concern is in random access memories (RAMs), both static (SRAMs) and dynamic (DRAMs), because these microelectronic devices contain the largest number of bits, but other parts, such as microprocessors, are also potentially susceptible to upset. In addition, other single-event effects (SEEs), specifically latch-up and burnout, can also be induced by atmospheric neutrons

Keywords

DRAM chips; SRAM chips; avionics; ion beam effects; microprocessor chips; neutron effects; proton effects; radiation hardening (electronics); aircraft electronics; atmospheric neutron flux; atmospheric neutrons; avionics; avionics designs; fibre optic systems; heavy ions; in-flight rates; microelectronic devices; microprocessors; protons; random access memories; single-event upset; Aerospace electronics; Atmosphere; Atmospheric measurements; Ionizing radiation; Laboratories; Microelectronics; Military computing; Neutrons; Random access memory; Single event upset;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.490893

Filename

490893