Title :
A Novel 700-V SOI LDMOS With Double-Sided Trench
Author :
Luo, Xiaorong ; Zhang, Bo ; Li, Zhaoji ; Guo, Yufeng ; Tang, Xinwei ; Liu, Yong
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu
fDate :
5/1/2007 12:00:00 AM
Abstract :
A novel silicon-on-insulator (SOI) high-voltage device structure with double-sided trenches on the buried oxide layer (DT SOI) is proposed and its breakdown characteristics are investigated theoretically and experimentally in this letter. Theoretically, the charges implemented in the DTs, whose density changes with the drain voltage, increase the electric field in the buried layer and modulate the electric field in the drift region, which results in the enhancement of the breakdown voltage (BV). Experimentally, the BV of 730 V is obtained for the first time in SOI LDMOS with DT on 20-mum SOI layer and 1- mum buried oxide layer
Keywords :
MIS devices; buried layers; electric breakdown; silicon-on-insulator; 700 V; SOI LDMOS; breakdown voltage; buried oxide layer; double-sided trench; high-voltage device structure; silicon-on-insulator; Breakdown voltage; Charge carrier processes; Electric breakdown; Electric potential; Silicon on insulator technology; Thin film devices; Breakdown voltage (BV); charge; double-sided trench (DT); electric field; modulate;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.894648
