Title :
Estimation of thin-oxide reliability using proportional hazards models
Author :
Elsayed, E.A. ; Chan, C.K.
Author_Institution :
Dept. of Ind. Eng., Rutgers Univ., Piscataway, NJ, USA
fDate :
8/1/1990 12:00:00 AM
Abstract :
Proportional hazards models for estimating thin-oxide dielectric reliability and time-dependent dielectric-breakdown hazard rates are developed. Two groups of models are considered: group one ignores interactions between temperature and electric field, while group two considers several forms of interactions. The inclusion of interaction is not statistically significant at the 1% level. An analysis of the Hokari time-dependent dielectric-breakdown data, in terms of the form of the electric-field acceleration factor, shows that the approach of I.C. Chen et al. (1985) is more appropriate than the approach of D.L. Crook (1979)
Keywords :
dielectric thin films; electric breakdown of solids; life testing; reliability; silicon compounds; statistical analysis; SiO2; accelerated life testing; electric-field acceleration factor; proportional hazards models; thin-oxide dielectric reliability; time-dependent dielectric-breakdown hazard rates; Acceleration; Dielectric breakdown; Electric breakdown; Hazards; Integrated circuit modeling; Life estimation; Life testing; Stress; Temperature; Voltage;
Journal_Title :
Reliability, IEEE Transactions on