DocumentCode :
811199
Title :
Electrical Characterization of Leaky Charge-Trapping High- 
MOS Devices Using Pulsed 
&n
Author :
Martens, K. ; Rosmeulen, M. ; Kaczer, B. ; Groeseneken, G. ; Maes, H.E.
Author_Institution :
Katholieke Univ., Leuven
Volume :
28
Issue :
5
fYear :
2007
fDate :
5/1/2007 12:00:00 AM
Firstpage :
436
Lastpage :
439
Abstract :
A pulsed Q-V method enabling charge or capacitance measurements versus gate voltage of aggressively scaled, leaky (up to ~10 A/cm2 ), and charge-trapping high-kappa MOS devices is introduced. The method does not require RF structures and can be used on MOS capacitors or MOSFETs with an oxide capacitance of 1-10 pF. The method enables the measurement of charge trapping characteristics in leaky MOS devices and allows the accurate measurement of the inversion charge without influence of trapping for the determination of mobility in leaky charge-trapping MOS devices
Keywords :
MOS capacitors; MOSFET; capacitance measurement; high-k dielectric thin films; 1 to 10 pF; MOS capacitors; MOSFET; capacitance measurements; charge measurement; charge trapping characteristics; electrical characterization; inversion charge; leaky charge-trapping high-k MOS devices; mobility determination; pulsed C-V method; pulsed Q-V method; Capacitance measurement; Charge measurement; Current measurement; Dielectric substrates; MOS capacitors; MOS devices; MOSFETs; Pulse measurements; Radio frequency; Voltage; Charge trapping; MOSFET; electrical characterization; high- $kappa$ $C$ $V$ $Q$ $V$ ;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2007.895431
Filename :
4160036
Link To Document :
