Title :
AlGaInP visible laser diodes with heavily Be-doped cladding layer grown by gas source molecular beam epitaxy
Author :
Takamori, A. ; Uchiyama, Kenji ; Suzuki, Takumi ; Kikuchi, Ryota ; Nakajima, Masahiro
Author_Institution :
Matsushita Res. Inst. Tokyo Inc., Kawasaki, Japan
Abstract :
The successful room temperature continuous wavelength operation of an index guided GaInP/AlGaInP double heterostructure laser diode ( lambda =670 nm) has been achieved for the first time by using the combination of gas source molecular beam epitaxy with metal organic vapour phase epitaxy. The laser diodes show threshold currents of approximately 60 mA at 25 degrees C, and high characteristic temperatures of approximately 130 K. The maximum lasing temperature was 65 degrees C.
Keywords :
III-V semiconductors; aluminium compounds; chemical beam epitaxial growth; gallium compounds; indium compounds; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 25 C; 60 mA; 65 C; 670 nm; AlGaInP:Be cladding layer; GaInP-AlGaInP; characteristic temperatures; continuous wavelength operation; double heterostructure; gas source molecular beam epitaxy; maximum lasing temperature; metal organic vapour phase epitaxy; room temperature; threshold currents; visible laser diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921103
