DocumentCode :
811206
Title :
A novel bipolar imaging device - BASIC (BAse stored imager in CMOS Process)
Author :
Kook, Youn-Jae ; Cheon, Jun-Ho ; Lee, Jong-Ho ; Park, Young-June ; Min, Hong-Shick
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
Volume :
50
Issue :
11
fYear :
2003
Firstpage :
2189
Lastpage :
2195
Abstract :
A new pixel structure named base stored imager in CMOS process (BASIC), is proposed and realized with a conventional 1.5 μm CMOS process. The BASIC cell comprises three pMOSFETs and a new photosensor, which has the gate-body tied nMOSFET structure. The BASIC cell achieves high responsivity because the photosensor amplifies the photogenerated electron-hole pairs. Dynamic range is improved by using the reset of the base through the pMOSFET and correlated double sampling operation. The structure and operation principles of the BASIC cell are presented together with measurement results from the fabricated samples. It is shown that the BASIC cell can be scaled down for large arrays and it is adequate for low voltage operation.
Keywords :
CMOS image sensors; image sampling; low-power electronics; 1.5 μm CMOS process; 1.5 micron; BASIC; amplification pixel; base stored imager in CMOS process; bipolar imaging device; correlated double sampling operation; dynamic range improvement; gate-body tied nMOSFET structure; high responsivity; large arrays; low voltage operation; operation principles; pMOSFETs; photogenerated electron-hole pairs; photosensor; CMOS image sensors; CMOS process; Computational Intelligence Society; Dynamic range; Image sampling; Low voltage; MOSFET circuits; Pixel; Sensor systems; System-on-a-chip;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2003.816912
Filename :
1239034
Link To Document :
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