Title :
Comparison of electronic characteristics and thermal resistance for HEMTs grown on GaAs and Si substrates
Author :
Yashiro, Hitoshi ; Moritani, A.
Abstract :
HEMTs have been successfully fabricated on silicon and their thermal resistance evaluated for the first time. A maximum transconductance of 330 mS/mm was obtained with 0.8 mu m gate length and 105 mu m width. The thermal resistance of the HEMTs on Si was 36+or-5 degrees /W with total device thickness of 400 mu m, demonstrating that the thermal resistance of GaAs/Si is about half that of GaAs/GaAs.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; silicon; solid-state microwave devices; thermal resistance; 0.8 micron; 330 mS; AlGaAs-GaAs; GaAs substrate; HEMTs; I-V characteristics; Si substrate; electronic characteristics; gate length; maximum transconductance; microwave performance; thermal resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921104
