Crystallization of Double-Layered Silicon Thin Films by Solid Green Laser Annealing for High-Performance Thin-Film Transistors

We report a new laser crystallization method employing double-layered amorphous-Si ( a-Si) thin films for solid green laser annealing (GLA) crystallization that is called GLA double-layered x´tallization (GLADLAX). Crystallization of the upper and lower a-Si layers of the double-layered substrate at a single laser scanning was achieved, with the upper a-Si becoming poly-Si with very large crystal grains and the lower a-Si layer becoming microcrystalline Si. Thin-film transistors using the upper layer of poly-Si that is crystallized by the method as their active channels had excellent switching performance, with their mobility exceeding 350 cm²/Vmiddots, demonstrating promising applicability of GLADLAX to thin-film electronics