• DocumentCode
    811319
  • Title

    Microwave Cl2/H2 discharges for high rate etching of InP

  • Author

    Constantine, C. ; Barratt, C. ; Pearton, S.J. ; Ren, Fengyuan ; Lothian, J.R.

  • Author_Institution
    Plasma Therm IP, St. Petersburg, FL, USA
  • Volume
    28
  • Issue
    18
  • fYear
    1992
  • Firstpage
    1749
  • Lastpage
    1750
  • Abstract
    Microwave (2.45 GHz) Cl2/H2 discharges operated in the electron cyclotron resonance condition at low pressure (0.5 mtorr) are shown to yield high-rate (1.5 mu m min-1) plasma etching of InP at 150 degrees C with low additional DC bias (-150 V) on the sample. The etched surface morphology and optical quality, and anisotropy of the resultant features are all strong functions of the Cl2-to-H2 ratio in the discharge.
  • Keywords
    III-V semiconductors; chlorine; high-frequency discharges; hydrogen; indium compounds; semiconductor technology; sputter etching; -150 V; 0.5 mtorr; 150 degC; 2.45 GHz; InP; anisotropy; electron cyclotron resonance condition; etched surface morphology; high rate etching; low pressure; microwave Cl 2-H 2 discharges; optical quality; plasma etching; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19921112
  • Filename
    158572
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=811319