Title :
100-GHz Quasi-Yagi Antenna in Silicon Technology
Author :
Sun, M. ; Zhang, Y.P.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nat. Technol. Univ., Singapore
fDate :
5/1/2007 12:00:00 AM
Abstract :
This letter presents a 100-GHz integrated Quasi-Yagi antenna on silicon substrates of low resistivity 10 Omegamiddotcm. The fabrication was realized with the back-end-of-line process. The characterization was conducted on wafer with Cascade Microtech coplanar probes and an HP8510XF network analyzer. Reflection measurements show a return loss of 8.2 dB at 100 GHz and a -6-dB impedance bandwidth of 89-104 GHz. Gain measurements show a gain of 5.7 dBi at 100 GHz. The simulated radiation patterns are also presented. It is anticipated that the results presented here are useful and inspiring for engineers interested in 100-GHz complementary metal-oxide-semiconductor radio front-end designs
Keywords :
CMOS integrated circuits; Yagi antenna arrays; antenna radiation patterns; millimetre wave antenna arrays; silicon; 100 GHz; 8.2 dB; 89 to 104 GHz; CMOS radio; Cascade Microtech coplanar probes; HP8510XF network analyzer; antenna radiation patterns; back-end-of-line process; gain measurements; integrated quasiYagi antenna; reflection measurements; silicon technology; Antenna measurements; Bandwidth; Conductivity; Fabrication; Gain measurement; Impedance measurement; Loss measurement; Probes; Reflection; Silicon; Complementary metal–oxide–semiconductor (CMOS) radio; Quasi-Yagi antenna; integrated antenna;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.895447
