DocumentCode :
811404
Title :
Analytical Determination of MOSFET\´s High-Frequency Noise Parameters From NF 
Measurements and Its Application in RFIC Design
Author :
Asgaran, Saman ; Deen, M. Jamal ; Chen, Chih-Hung ; Rezvani, G. Ali ; Kamali, Yasmin ; Kiyota, Yukihiro
Author_Institution :
Dept. of Electr. & Comput. Eng., McMaster Univ., Hamilton, Ont.
Volume :
42
Issue :
5
fYear :
2007
fDate :
5/1/2007 12:00:00 AM
Firstpage :
1034
Lastpage :
1043
Abstract :
An analytical method, along with closed-form solutions, to determine high-frequency (HF) noise parameters of the MOSFET from its noise figure (NF) measurements with an arbitrary source impedance is presented and experimentally verified. This method allows for the determination of the minimum noise figure, NFmin, equivalent noise resistance, Rn, and optimum source admittance Yopt , of MOSFET directly from a single high-frequency 50-Omega noise figure measurement and a model characterization based on the transistor´s measured scattering parameters. The proposed method can accurately predict the noise parameters of deep-submicron MOSFETs, and hence is useful in the design of low-noise radio-frequency integrated circuits (RFICs). Application of the proposed method in the design of CMOS RF low-noise amplifiers (LNAs) is also discussed
Keywords :
CMOS integrated circuits; MOSFET; S-parameters; equivalent circuits; low noise amplifiers; radiofrequency integrated circuits; semiconductor device models; semiconductor device noise; 50 ohm; CMOS RF low-noise amplifiers; MOSFET noise; NF50 measurements; RFIC design; analytical noise modeling; arbitrary source impedance; deep-submicron MOSFET; equivalent noise resistance; high-frequency noise figure measurement; high-frequency noise parameters; low-noise radio-frequency integrated circuits; model characterization; optimum source admittance; scattering parameters; Admittance measurement; Closed-form solution; Electrical resistance measurement; Hafnium; Image analysis; Integrated circuit measurements; MOSFET circuits; Noise figure; Noise measurement; Radiofrequency integrated circuits; Analytical noise modeling; MOSFET noise; low-noise amplifier; noise figure; noise parameters;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2007.894309
Filename :
4160059
Link To Document :
