• DocumentCode
    811451
  • Title

    MOS transistor modelling using neural network

  • Author

    Litovski, Vanco B. ; Radjenovic, J.I. ; Mrcarica, Z.M. ; Milenkovic, S.Lj.

  • Author_Institution
    Nis Univ., Yugoslavia
  • Volume
    28
  • Issue
    18
  • fYear
    1992
  • Firstpage
    1766
  • Lastpage
    1768
  • Abstract
    A new application of the artificial neural network (ANN) is proposed. It is used for black-box modelling of electronic devices. The power of ANNs used as a realisation of a mapping algorithm is demonstrated on the MOS transistor modelling paradigm. A unique continuous function is used to cover all regions of transistor operation.
  • Keywords
    electronic engineering computing; insulated gate field effect transistors; neural nets; semiconductor device models; MOS transistor modelling; artificial neural network; black-box modelling; continuous function; electronic devices; mapping algorithm;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19921124
  • Filename
    158583
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=811451