Title :
MOS transistor modelling using neural network
Author :
Litovski, Vanco B. ; Radjenovic, J.I. ; Mrcarica, Z.M. ; Milenkovic, S.Lj.
Author_Institution :
Nis Univ., Yugoslavia
Abstract :
A new application of the artificial neural network (ANN) is proposed. It is used for black-box modelling of electronic devices. The power of ANNs used as a realisation of a mapping algorithm is demonstrated on the MOS transistor modelling paradigm. A unique continuous function is used to cover all regions of transistor operation.
Keywords :
electronic engineering computing; insulated gate field effect transistors; neural nets; semiconductor device models; MOS transistor modelling; artificial neural network; black-box modelling; continuous function; electronic devices; mapping algorithm;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921124
