Title :
Simultaneous quality improvement of tunneling- and interpoly-oxides of nonvolatile memory devices by NH3 and N2O nitridation
Author :
Chao, Tien Sheng ; Chang, Tsung Hsien
Abstract :
This brief presents a new nitridation process on a floating poly-Si gate to improve the quality of both tunneling oxide and interpoly-oxide of nonvolatile memories. Three types of poly-Si for a floating gate have been investigated. We found in-situ doped poly-Si shows the best performance in terms of breakdown field, charge-to-breakdown (QBD) and trapping rate. The QBD of interpoly-oxide can be reached as high as 35 C/cm2. This scheme is very promising for nonvolatile memory devices.
Keywords :
EPROM; MOSFET; dielectric thin films; flash memories; hot carriers; nitridation; semiconductor device breakdown; semiconductor device reliability; tunnelling; EEPROM; MOSFET reliability; N2O; N2O nitridation; NH3; NH3 nitridation; Si-SiO2; Si-SiON; breakdown field; charge-to-breakdown; flash nonvolatile memories; floating poly-Si gate; hot-carrier resistance; in-situ doped poly-Si; interpoly-oxides; nonvolatile memory devices; simultaneous quality improvement; trapping rate; tunneling oxides; Chaos; Dielectrics; EPROM; Electric breakdown; Nitrogen; Nonvolatile memory; Oxidation; Rough surfaces; Surface roughness; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2003.818819
