Title :
A Multilevel Read and Verifying Scheme for Bi-NAND Flash Memories
Author :
Chung, Chiu-Chiao ; Lin, Hongchin ; Lin, Yen-Tai
Author_Institution :
Dept. of Electr. Eng., Nat. Chung-Hsing Univ., Taichung
fDate :
5/1/2007 12:00:00 AM
Abstract :
A multilevel sensing and read verifying circuit is proposed for Bi-NAND (Buried bit-line NAND) type flash memories. The Bi-NAND technology employs the negative programmed threshold voltage to facilitate the multilevel storage with lower program/erase bias and programming disturbance. The sensing circuit utilizes an advanced cross-coupled sense amplifier to achieve excellent immunity against mismatch effect and reduction of power consumption. As well, it acts as data latch during multilevel sensing and verifying operations. By comparing to the conventional and simultaneous verifying circuits, the proposed scheme with dichotomous architecture simplifies the verifying circuit and speeds up verification process for multilevel operation. By adding only one latch and a pair of switches, the circuit can be easily expanded for one more bit per cell
Keywords :
NAND circuits; flash memories; Bi-NAND flash memories; buried bit-line NAND; cross-coupled sense amplifier; data latch; dichotomous architecture; erase bias; lower program; mismatch effect; multilevel sensing; multilevel storage; negative programmed threshold voltage; power consumption reduction; programming disturbance; read verifying circuit; sensing circuit; switches; Energy consumption; Flash memory; Helium; Image storage; Latches; Power amplifiers; Switches; Switching circuits; Threshold voltage; Voltage control; Bi-NAND; Multilevel; dichotomous; flash memory; mismatch; negative programmed threshold voltage; read verifying;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2007.894822
