Title :
A 1.2 V Reactive-Feedback 3.1–10.6 GHz Low-Noise Amplifier in 0.13
CMOS
Author :
Reiha, Michael T. ; Long, John R.
Author_Institution :
Electron. Res. Lab./DIMES, Delft Univ. of Technol.
fDate :
5/1/2007 12:00:00 AM
Abstract :
A 15.1 dB gain, 2.1 dB (min.) noise figure low-noise amplifier (LNA) fabricated in 0.13 mum CMOS operates across the entire 3.1-10.6 GHz ultrawideband (UWB). Noise figure variation over the band is limited to 0.43 dB. Reactive (transformer) feedback reduces the noise figure, stabilizes the gain, and sets the terminal impedances over the desired bandwidth. It also provides a means of separating ESD protection circuitry from the RF input path. Bias current-reuse limits power consumption of the 0.87mm2 IC to 9 mW from a 1.2 V supply. Comparable measured results are presented from both packaged and wafer probed test samples
Keywords :
CMOS analogue integrated circuits; MMIC amplifiers; circuit feedback; low noise amplifiers; ultra wideband technology; wideband amplifiers; 0.13 micron; 1.2 V; 15.1 dB; 2.1 dB; 3.1 to 10.6 GHz; 9 mW; CMOS integrated circuits; ESD protection circuitry; MMIC; RF input path; bias current-reuse; broadband amplifier; monolithic transformer; noise figure; reactive transformer feedback; reactive-feedback low-noise amplifier; Bandwidth; Circuits; Electrostatic discharge; Feedback; Gain; Impedance; Low-noise amplifiers; Noise figure; Protection; Ultra wideband technology; Bias current-reuse; broadband amplifier; low-noise amplifier; monolithic transformer; reactive feedback; ultrawideband;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2007.894329