• DocumentCode
    811763
  • Title

    Dislocation scattering in n-type modulation doped Al0.3Ga0.7As/InxGa1-xAs/Al 0.3Ga0.7As quantum wells

  • Author

    Zhao, Dianfen ; Kuhn, Kelin J.

  • Author_Institution
    Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
  • Volume
    38
  • Issue
    12
  • fYear
    1991
  • fDate
    12/1/1991 12:00:00 AM
  • Firstpage
    2582
  • Lastpage
    2589
  • Abstract
    The mobility due to misfit dislocation scattering in n-type modulation doped Al0.3Ga0.7As/InxGa1-xAs/Al 0.3Ga0.7As quantum wells is discussed. Initially, the dislocations are modeled as an array of orthogonal charged lines. The scattering potential is introduced, including both the coulombic and piezoelectric components. The expression for the mobility limited by dislocation scattering is established, and the anisotropic characteristics of mobility and its variation with various material and device parameters are presented and discussed
  • Keywords
    III-V semiconductors; aluminium compounds; carrier mobility; dislocation scattering; gallium arsenide; indium compounds; semiconductor quantum wells; Al0.3Ga0.7As-InxGa1-x As -Al0.3Ga0.7As; anisotropic characteristics; coulombic component; misfit dislocation scattering; mobility; n-type modulation doped quantum wells; orthogonal charged lines; piezoelectric components; scattering potential; Anisotropic magnetoresistance; Artificial intelligence; Capacitive sensors; Electron mobility; Epitaxial layers; Impurities; Indium; Maxwell-Boltzmann distribution; Optical scattering; Particle scattering;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.158679
  • Filename
    158679
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=811763