Title :
Dislocation scattering in n-type modulation doped Al0.3Ga0.7As/InxGa1-xAs/Al 0.3Ga0.7As quantum wells
Author :
Zhao, Dianfen ; Kuhn, Kelin J.
Author_Institution :
Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
fDate :
12/1/1991 12:00:00 AM
Abstract :
The mobility due to misfit dislocation scattering in n-type modulation doped Al0.3Ga0.7As/InxGa1-xAs/Al 0.3Ga0.7As quantum wells is discussed. Initially, the dislocations are modeled as an array of orthogonal charged lines. The scattering potential is introduced, including both the coulombic and piezoelectric components. The expression for the mobility limited by dislocation scattering is established, and the anisotropic characteristics of mobility and its variation with various material and device parameters are presented and discussed
Keywords :
III-V semiconductors; aluminium compounds; carrier mobility; dislocation scattering; gallium arsenide; indium compounds; semiconductor quantum wells; Al0.3Ga0.7As-InxGa1-x As -Al0.3Ga0.7As; anisotropic characteristics; coulombic component; misfit dislocation scattering; mobility; n-type modulation doped quantum wells; orthogonal charged lines; piezoelectric components; scattering potential; Anisotropic magnetoresistance; Artificial intelligence; Capacitive sensors; Electron mobility; Epitaxial layers; Impurities; Indium; Maxwell-Boltzmann distribution; Optical scattering; Particle scattering;
Journal_Title :
Electron Devices, IEEE Transactions on
