Single particle-induced latchup

Author

Bruguier, G. ; Palau, J.-M.

Author_Institution

Centre d´´Electron. de Montpellier, Univ. des Sci. et Tech. du Languedoc, Montpellier, France

Volume

43

Issue

2

fYear

1996

fDate

4/1/1996 12:00:00 AM

Firstpage

522

Lastpage

532

Abstract

This paper presents an up-to-date overview of the single-event latchup (SEL) hard failure mode encountered in electronic device applications involving heavy ion environment. This phenomenon is specific to CMOS technology. Single-event latchup is discussed after a short description of the effects induced by the interaction of a heavy ion with silicon. Understanding these effects is necessary to understand the different failures. This paper includes a description of the latchup phenomenon and the different triggering modes, reviews of models and hardening solutions, and finally presents new developments in simulation approaches

Keywords

CMOS integrated circuits; digital simulation; elemental semiconductors; integrated circuit modelling; ion beam effects; radiation hardening (electronics); silicon; space vehicle electronics; CMOS technology; Si; electronic device; hard failure mode; hardening; heavy ion environment; interaction; models; simulation; single particle-induced latchup; triggering modes; Atomic layer deposition; CMOS technology; Charge carrier processes; Energy exchange; Energy loss; Equations; Helium; Semiconductor device modeling; Silicon; Target tracking;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.490898

Filename

490898