DocumentCode :
811778
Title :
Single particle-induced latchup
Author :
Bruguier, G. ; Palau, J.-M.
Author_Institution :
Centre d´´Electron. de Montpellier, Univ. des Sci. et Tech. du Languedoc, Montpellier, France
Volume :
43
Issue :
2
fYear :
1996
fDate :
4/1/1996 12:00:00 AM
Firstpage :
522
Lastpage :
532
Abstract :
This paper presents an up-to-date overview of the single-event latchup (SEL) hard failure mode encountered in electronic device applications involving heavy ion environment. This phenomenon is specific to CMOS technology. Single-event latchup is discussed after a short description of the effects induced by the interaction of a heavy ion with silicon. Understanding these effects is necessary to understand the different failures. This paper includes a description of the latchup phenomenon and the different triggering modes, reviews of models and hardening solutions, and finally presents new developments in simulation approaches
Keywords :
CMOS integrated circuits; digital simulation; elemental semiconductors; integrated circuit modelling; ion beam effects; radiation hardening (electronics); silicon; space vehicle electronics; CMOS technology; Si; electronic device; hard failure mode; hardening; heavy ion environment; interaction; models; simulation; single particle-induced latchup; triggering modes; Atomic layer deposition; CMOS technology; Charge carrier processes; Energy exchange; Energy loss; Equations; Helium; Semiconductor device modeling; Silicon; Target tracking;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.490898
Filename :
490898
Link To Document :
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