Title :
Universal Bias Dependence of Excess Current Induced by Self-Heating Effect for a-Si:H TFTs
Author :
Chen, Hsin-Li ; Chen, Wang-Jung ; Liu, Po-Yuan ; Cheng, Kuo-Hsing ; Lai, Ming-Sheng ; Wang, Chih-Wei ; Liu, Chun-Ting
Author_Institution :
AU Optronics Corp., Hsinchu
fDate :
5/1/2007 12:00:00 AM
Abstract :
A universal bias correlation of the excess current induced by the self-heating effect is found with the dependence on the dissipated power for a-Si:H thin-film transistors (TFTs). By inspecting the characteristics of IDS/W versus W, the channel width for TFTs without the self-heating effect is identified. From the difference of the total current and the nonself-heating one, the excess current is extracted. Based on the transport mechanism, together with the intrinsic nature of the direct correlation between lattice temperature and joule heating, the underlying mechanism for the self-heating effect of a-Si:H TFTs is investigated. This discovery will be beneficial to further establish the physics-based model for the self-heating effect of a-Si:H TFTs
Keywords :
amorphous semiconductors; field effect transistors; hydrogen; silicon; thin film transistors; Si:H; joule heating; self-heating effect; thin-film transistors; universal bias correlation; Degradation; Driver circuits; Heating; Lattices; Liquid crystal displays; Scattering; Temperature; Thermal conductivity; Thermionic emission; Thin film transistors; a-Si:H thin-film transistors (TFTs); potential barrier; scattering; self-heating effect; thermionic emission; trapped charges;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2007.893191
