Title :
Simple model for the hysteretic behavior of thin-film electroluminescent devices
Author :
Neyts, Kristiaan A.
Author_Institution :
Lab. Voor Elektronika en Meettech., Gent Univ., Belgium
fDate :
12/1/1991 12:00:00 AM
Abstract :
The hysteretic behaviour of TFEL (thin-film electroluminescent) devices can be simulated relatively well with the numerical model introduced by W.E. Howard et al. (1982). An approximate model is developed by introducing a time-independent space-charge distribution. With this method, steady-state solutions can be calculated very efficiently. Hysteretic curves obtained with this method are given for different frequencies, and the results are discussed
Keywords :
electroluminescence; hysteresis; luminescent devices; semiconductor device models; space charge; Howard model; TFEL; hysteretic behavior; linear approximation; memory effects; model; steady-state solutions; thin-film electroluminescent devices; time-independent space-charge distribution; Charge carrier processes; Electroluminescent devices; Electron traps; Hysteresis; Insulation; Numerical models; Phosphors; Space charge; Steady-state; Thin film devices;
Journal_Title :
Electron Devices, IEEE Transactions on
