DocumentCode
811851
Title
On the short-channel theory for MOS transistor
Author
Conti, Massimo ; Turchetti, Claudio
Author_Institution
Dipartimento di Electtronica, Ancona Univ., Italy
Volume
38
Issue
12
fYear
1991
fDate
12/1/1991 12:00:00 AM
Firstpage
2657
Lastpage
2661
Abstract
An attempt is made to derive rigorous analysis for the short-channel MOS transistor on the basis of the 2-D Poisson´s equation. The analysis is able to predict a correct dependence of the threshold voltage on channel length and drain voltage, avoids the need for the definition of an average depletion charge density, and gives more physical insight into the short-channel effects
Keywords
insulated gate field effect transistors; semiconductor device models; surface potential; 2D Poisson equation; MOS transistor; channel length; drain voltage; short-channel theory; surface potential; threshold voltage; Boundary conditions; Data analysis; Helium; MOS devices; MOSFET circuits; Performance analysis; Poisson equations; Threshold voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.158687
Filename
158687
Link To Document