Ferromagnetic Semiconductor Heterostructures for Spintronics

Author

Dietl, Tomasz ; Ohno, Hideo ; Matsukura, Fumihiro

Author_Institution

Lab. for Cryogenic & Spintronic Res., Polish Acad. of Sci., Warsaw

Volume

54

Issue

5

fYear

2007

fDate

5/1/2007 12:00:00 AM

Firstpage

945

Lastpage

954

Abstract

Ferromagnetism in transition-metal-doped III-V and II-VI compound semiconductors and their heterostructures allow exploration of unprecedented possibilities, in which spin degrees of freedom and more common charge degrees of freedom are combined. These include quantum heterostructures that incorporate ferromagnetism, electric field as well as light control of ferromagnetism, and magnetization reversal by electrical means. Possibilities of achieving high ferromagnetic-transition temperature are also discussed

Keywords

Hall effect; II-VI semiconductors; III-V semiconductors; arsenic compounds; ferromagnetic materials; gallium compounds; magnetic circular dichroism; magnetic tunnelling; magnetoelectronics; manganese compounds; (GaMn)As; (InMn)As; II-VI compounds; III-V compounds; anomalous Hall effect; ferromagnetic semiconductor; heterostructures; magnetic circular dichroism; magnetic tunneling junctions; magnetization manipulation; p-d Zener model; spintronics; Laboratories; Lighting control; Magnetic materials; Magnetic semiconductors; Magnetization reversal; Magnetoelectronics; Material storage; Semiconductor materials; Temperature; Tunneling magnetoresistance; (Ga,Mn)As; (In,Mn)As; Anomalous Hall effect; II–VI compounds; III–V compounds; ferromagnetic semiconductors; magnetic circular dichroism; magnetic tunneling junctions; magnetization manipulation; p–d Zener model;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2007.894622

Filename

4160101