DocumentCode
811868
Title
Contact resistance for small contacts [MOSFET]
Author
Cumberbatch, Ellis ; Mahinthakumar, Ganamanikam
Author_Institution
Dept. of Math., Claremont Graduate Sch., CA, USA
Volume
38
Issue
12
fYear
1991
fDate
12/1/1991 12:00:00 AM
Firstpage
2669
Lastpage
2672
Abstract
An asymptotic analysis for current flow to small contacts in MOSFET source/drain regions is obtained. The formula for end resistance is compared with numerical simulations. It shows good agreement for contacts whose width is smaller than half the diffusion width
Keywords
boundary-value problems; contact resistance; insulated gate field effect transistors; semiconductor device models; MOSFET source/drain regions; asymptotic analysis; boundary valve problem; contact resistance; current flow; diffusion width; end resistance; model; numerical simulations; small contacts; Conducting materials; Conductivity; Contact resistance; Electrical resistance measurement; Electrostatics; Laplace equations; MOSFET circuits; Manufacturing processes; Mathematics; Shape;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.158689
Filename
158689
Link To Document