Substrate current measurements in thin SOI MOSFET´s at 300 and 77 K

Author

Kistler, Neal ; Woo, Jason ; Viswanathan, C.R. ; Terril, K. ; Vasudev, P.K.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

38

Issue

12

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

2684

Lastpage

2686

Abstract

Measurements of impact-ionized hole current in fully depleted SOI (silicon-on-insulator) MOSFETs at room temperature and liquid nitrogen temperature are reported. The measured current exhibits properties similar to those of the substrate current in bulk transistors, except for higher drain biases when the parasitic bipolar in the device is significant. Since the body contact is effective in collecting only a small fraction of the total generated hole current, the body contact cannot be used to eliminate the bipolar action in thin SOI, at least for channel widths on the order of 10 μm

Keywords

impact ionisation; insulated gate field effect transistors; semiconductor device testing; semiconductor-insulator boundaries; 10 micron; 300 K; 77 K; body contact; channel widths; fully depleted SOI MOSFET; impact-ionized hole current; parasitic bipolar; substrate current; Bipolar transistors; Breakdown voltage; Current measurement; Electron traps; Gallium arsenide; Impact ionization; MESFETs; MOSFET circuits; Substrates; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.158693

Filename

158693