Title :
Effect of Channel Width on the Electrical Characteristics of Amorphous/Nanocrystalline Silicon Bilayer Thin-Film Transistors
Author :
Hatzopoulos, Argyrios T. ; Arpatzanis, Nikolaos ; Tassis, Dimitrios H. ; Dimitriadis, Charalabos A. ; Templier, François ; Oudwan, Maher ; Kamarinos, George
Author_Institution :
Dept. of Phys., Aristotle Univ., Thessaloniki
fDate :
5/1/2007 12:00:00 AM
Abstract :
The effect of the channel width dimension on the electrical characteristics of amorphous/nanocrystalline silicon bilayer thin-film transistors (TFTs) is investigated. For comparison, nanocrystalline silicon monolayer TFTs are also studied. The experimental results show that the leakage current is decreased and the back-channel conduction is suppressed in bilayer channel devices. The overall results demonstrate that the performance of bilayer TFTs is enhanced with decreasing the channel width, which is attributed to the corner effect
Keywords :
amorphous semiconductors; leakage currents; nanostructured materials; thin film transistors; back-channel conduction; bilayer channel devices; channel width; leakage current; nanocrystalline materials; thin-film transistors; Active matrix liquid crystal displays; Amorphous materials; Dielectric substrates; Electric variables; Etching; Information technology; Laboratories; Leakage current; Silicon; Thin film transistors; Amorphous silicon (a-Si); channel width; nanocrystalline silicon (nc-Si); thin-film transistor (TFT);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2007.894597
