GaAs Schottky diodes for THz mixing applications

Author

Crowe, Thomas W. ; Mattauch, R.J. ; Röser, Hans Peter ; Bishop, William L. ; Peatman, William C B ; Liu, Xiaolei

Author_Institution

Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA

Volume

80

Issue

11

fYear

1992

fDate

11/1/1992 12:00:00 AM

Firstpage

1827

Lastpage

1841

Abstract

The operation of GaAs Schottky barrier diodes, the critical mixer element used in heterodyne receivers for a variety of scientific applications in the terahertz frequency range, is reviewed. The constraints that the receiver system places on the diodes are considered, and the fundamental guidelines for device optimization are presented. The status of ongoing research, both experimental and theoretical, is examined. Emphasis is placed on investigations of the various effects that can limit diode performance at these high frequencies. Investigations of planar diode technology are summarized, and the potential replacement of whisker-contacted devices with planar structures is considered

Keywords

III-V semiconductors; Schottky-barrier diodes; gallium arsenide; mixers (circuits); GaAs; GaAs Schottky barrier diodes; THF; constraints; device optimization; diode performance limitations; guidelines; heterodyne receivers; mixer element; ongoing research; operation; planar diode technology; planar structures; receiver system; semiconductors; terahertz frequency range; whisker-contacted devices; Design optimization; Frequency; Gallium arsenide; Guidelines; Laboratories; Radio astronomy; Schottky barriers; Schottky diodes; Semiconductor diodes; Submillimeter wave technology;

fLanguage

English

Journal_Title

Proceedings of the IEEE

Publisher

ieee

ISSN

0018-9219

Type

jour

DOI

10.1109/5.175258

Filename

175258