• DocumentCode
    811963
  • Title

    Status of TFT/LCD flat-panel display

  • Author

    Tsukada

  • Author_Institution
    Hitachi Ltd., Tokyo
  • Volume
    38
  • Issue
    12
  • fYear
    1991
  • fDate
    12/1/1991 12:00:00 AM
  • Firstpage
    2689
  • Abstract
    Summary form only given. As the display size increases, and as the resolution gets higher, the gate-line delay problem and the yield of the panel becomes more important. Double-layered gate insulators such as Ta 2O5/SiN or Al2O3/SiN have been proposed and used in products. The Al-gate TFT (thin-film transistor) reduces gate-line delay and enhances production yield. With this Al-gate TFT, conventional design rules can achieve a diagonal size of over 30 in and resolution of over 1 Mpixel
  • Keywords
    flat panel displays; liquid crystal displays; semiconductor technology; thin film transistors; 1 Mpixel; 30 in; Al gate; Al2O3-SiN; TFT/LCD flat-panel display; Ta2O5-SiN; design rules; diagonal size; double-layered gate insulators; gate-line delay; production yield; Active matrix technology; Costs; Delay; Dielectric substrates; Liquid crystal displays; Production; Silicon compounds; Thermal management; Thin film transistors; Wiring;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.158698
  • Filename
    158698
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=811963