DocumentCode :
811963
Title :
Status of TFT/LCD flat-panel display
Author :
Tsukada
Author_Institution :
Hitachi Ltd., Tokyo
Volume :
38
Issue :
12
fYear :
1991
fDate :
12/1/1991 12:00:00 AM
Firstpage :
2689
Abstract :
Summary form only given. As the display size increases, and as the resolution gets higher, the gate-line delay problem and the yield of the panel becomes more important. Double-layered gate insulators such as Ta 2O5/SiN or Al2O3/SiN have been proposed and used in products. The Al-gate TFT (thin-film transistor) reduces gate-line delay and enhances production yield. With this Al-gate TFT, conventional design rules can achieve a diagonal size of over 30 in and resolution of over 1 Mpixel
Keywords :
flat panel displays; liquid crystal displays; semiconductor technology; thin film transistors; 1 Mpixel; 30 in; Al gate; Al2O3-SiN; TFT/LCD flat-panel display; Ta2O5-SiN; design rules; diagonal size; double-layered gate insulators; gate-line delay; production yield; Active matrix technology; Costs; Delay; Dielectric substrates; Liquid crystal displays; Production; Silicon compounds; Thermal management; Thin film transistors; Wiring;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.158698
Filename :
158698
Link To Document :
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