Title :
Frequency multipliers for millimeter and submillimeter wavelengths
Author :
RÄisÄnen, Antti V.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fDate :
11/1/1992 12:00:00 AM
Abstract :
Theory and tools for analysis and design of millimeter- and submillimeter-wave multipliers are discussed. Experimental work is reviewed. The Schottky diode model at submillimeter frequencies, use of Schottky multiplier chains versus direct higher-order multipliers, and the effect of cooling on Schottky diode multipliers are discussed. Alternative diodes such as the high electron mobility varactor (HEMV), the barrier-intrinsic-n+ diode (BIN), the barrier-n-n+ diode (BNN), the quantum well diode (QWD), and the single barrier varactor (SBV) are discussed, with attention given to their potential submillimeter frequency multipliers
Keywords :
Schottky-barrier diodes; frequency multipliers; semiconductor device models; solid-state microwave devices; submillimetre wave devices; varactors; EHF; Schottky diode model; Schottky diode multipliers; Schottky multiplier chains; THF; barrier-intrinsic-n+ diode; barrier-n-n+ diode; cooling; high electron mobility varactor; higher-order multipliers; millimeter wavelengths; quantum well diode; single barrier varactor; submillimeter frequencies; submillimeter frequency multipliers; submillimeter wavelengths; Atmosphere; Cooling; Frequency; Local oscillators; Radio astronomy; Satellite broadcasting; Schottky diodes; Solid state circuits; Space technology; Varactors;
Journal_Title :
Proceedings of the IEEE
