A review of the techniques used for modeling single-event effects in power MOSFETs

Author

Johnson, G.H. ; Palau, J.-M. ; Dachs, C. ; Galloway, K.F. ; Schrimpf, R.D.

Author_Institution

Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA

Volume

43

Issue

2

fYear

1996

fDate

4/1/1996 12:00:00 AM

Firstpage

546

Lastpage

560

Abstract

Heavy ions can trigger catastrophic failure modes in power metal-oxide-semiconductor field-effect transistors (MOSFETs). Single-event effects (SEE), namely, single-event burnout (SEB), and single-event gate rupture (SEGR), of power MOSFETs are catastrophic failure mechanisms that are initiated by the passage of a heavy ion through the device structure. Various analytical, semianalytical, and simulation models have been developed to help explain these phenomena. This paper presents a review of these models and explains their merits and limitations. New results are included to illustrate the approaches

Keywords

avalanche breakdown; digital simulation; ion beam effects; power MOSFET; semiconductor device models; space vehicle electronics; catastrophic failure modes; current induced avalanche; drain body avalanche; heavy ions; power MOSFET; power metal-oxide-semiconductor field-effect transistor; simulation models; single-event burnout; single-event effects; single-event gate rupture; space environment; Analytical models; Dielectric breakdown; FETs; Failure analysis; Feedback; MOSFET circuits; Neck; Power MOSFET; Protons; Vents;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.490900

Filename

490900