Timing Response of Sinusoidal-Gated Geiger Mode InGaAs/InP APD

Author

Min Ren ; Yan Liang ; Wenlu Sun ; Guang Wu ; Campbell, Joe C. ; Heping Zeng

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA

Volume

26

Issue

17

fYear

2014

fDate

Sept.1, 1 2014

Firstpage

1762

Lastpage

1765

Abstract

We report the timing response of a sinusoidal-gated Geiger mode InGaAs/InP avalanche photodiode both in synchronous mode and free-running mode. It is found that the temporal peak of photon counts is dependent on the avalanche build-up and decay times, and the break down probability is a function of the separation between the photon arrival time and the peak of the excess bias gate. We observe broadening of timing jitter and lowering the total detection efficiency in the free-running mode relative to synchronous detection.

Keywords

III-V semiconductors; avalanche photodiodes; indium compounds; optical materials; photodetectors; photon counting; timing jitter; InGaAs-InP; avalanche build-up times; avalanche decay times; break down probability; excess bias gate; free-running mode; photon arrival time; photon counts; sinusoidal-gated Geiger mode InGaAs/InP avalanche photodiode; synchronous detection; synchronous mode; temporal peak; timing jitter broadening; timing response; total detection efficiency; Delays; Electric breakdown; Histograms; Indium gallium arsenide; Indium phosphide; Logic gates; Photonics; Avalanche breakdown; RF signals; avalanche photodiodes; infrared detectors; jitter; optoelectronic and photonic sensors;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2014.2334057

Filename

6849447