Title :
Timing Response of Sinusoidal-Gated Geiger Mode InGaAs/InP APD
Author :
Min Ren ; Yan Liang ; Wenlu Sun ; Guang Wu ; Campbell, Joe C. ; Heping Zeng
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA
Abstract :
We report the timing response of a sinusoidal-gated Geiger mode InGaAs/InP avalanche photodiode both in synchronous mode and free-running mode. It is found that the temporal peak of photon counts is dependent on the avalanche build-up and decay times, and the break down probability is a function of the separation between the photon arrival time and the peak of the excess bias gate. We observe broadening of timing jitter and lowering the total detection efficiency in the free-running mode relative to synchronous detection.
Keywords :
III-V semiconductors; avalanche photodiodes; indium compounds; optical materials; photodetectors; photon counting; timing jitter; InGaAs-InP; avalanche build-up times; avalanche decay times; break down probability; excess bias gate; free-running mode; photon arrival time; photon counts; sinusoidal-gated Geiger mode InGaAs/InP avalanche photodiode; synchronous detection; synchronous mode; temporal peak; timing jitter broadening; timing response; total detection efficiency; Delays; Electric breakdown; Histograms; Indium gallium arsenide; Indium phosphide; Logic gates; Photonics; Avalanche breakdown; RF signals; avalanche photodiodes; infrared detectors; jitter; optoelectronic and photonic sensors;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2014.2334057
