• DocumentCode
    812027
  • Title

    Theory of abnormal thyristor forward voltage behavior

  • Author

    Gerstenmaier, York C. ; Pfirsch, Frank D.

  • Author_Institution
    Siemens AG Res. Lab., Munich, Germany
  • Volume
    28
  • Issue
    6
  • fYear
    1992
  • Firstpage
    1242
  • Lastpage
    1249
  • Abstract
    The on-state current-voltage characteristic of thyristors is investigated by numerical simulation. For sufficiently high p-base concentration-as already known-an abrupt increase in on-state voltage is observed above a critical current density. Driving the device to higher currents results in a reduction of on-state voltage. Similar results are obtained for thyristor profiles with very shallow emitters. An analytic model that explains the described phenomena from first principles and leads to a simple criterion for current limiting in terms of Gummel numbers and carrier mobilities is presented
  • Keywords
    semiconductor device models; thyristors; Gummel numbers; carrier mobilities; critical current density; current limiting; forward voltage behavior; numerical simulation; on-state current-voltage characteristic; p-base concentration; thyristors; Charge carrier density; Charge carrier processes; Current-voltage characteristics; Doping; Electron mobility; Impurities; Numerical simulation; Semiconductor process modeling; Thyristors; Voltage;
  • fLanguage
    English
  • Journal_Title
    Industry Applications, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0093-9994
  • Type

    jour

  • DOI
    10.1109/28.175274
  • Filename
    175274