DocumentCode
812027
Title
Theory of abnormal thyristor forward voltage behavior
Author
Gerstenmaier, York C. ; Pfirsch, Frank D.
Author_Institution
Siemens AG Res. Lab., Munich, Germany
Volume
28
Issue
6
fYear
1992
Firstpage
1242
Lastpage
1249
Abstract
The on-state current-voltage characteristic of thyristors is investigated by numerical simulation. For sufficiently high p -base concentration-as already known-an abrupt increase in on-state voltage is observed above a critical current density. Driving the device to higher currents results in a reduction of on-state voltage. Similar results are obtained for thyristor profiles with very shallow emitters. An analytic model that explains the described phenomena from first principles and leads to a simple criterion for current limiting in terms of Gummel numbers and carrier mobilities is presented
Keywords
semiconductor device models; thyristors; Gummel numbers; carrier mobilities; critical current density; current limiting; forward voltage behavior; numerical simulation; on-state current-voltage characteristic; p-base concentration; thyristors; Charge carrier density; Charge carrier processes; Current-voltage characteristics; Doping; Electron mobility; Impurities; Numerical simulation; Semiconductor process modeling; Thyristors; Voltage;
fLanguage
English
Journal_Title
Industry Applications, IEEE Transactions on
Publisher
ieee
ISSN
0093-9994
Type
jour
DOI
10.1109/28.175274
Filename
175274
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