Improved ruggedness of a high-current vertical power DMOS

Author

Kim, Maeng Jun ; Mukherjee, Sayan ; Young, John C.

Author_Institution

North American Philips Corp., Briarcliff Manor, NY

Volume

38

Issue

12

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

2693

Lastpage

2694

Abstract

Summary form only given. An attempt was made to improve the ruggedness of a VDMOS through design and process innovation. To this end, a 10-A VDMOS with breakdown voltage in excess of 60 V was fabricated, tested, and compared with other devices. The VDMOS fabricated showed much higher power dissipation capability and superior ruggedness when compared with other devices available in the industry. Experimental data show that the high J_peak capability makes this VDMOS more reliable as a high-current power device and extends the safe operating range

Keywords

insulated gate field effect transistors; power transistors; reliability; semiconductor technology; 10 A; 60 V; SOA extension; VDMOS; breakdown voltage; high-current power device; high-current vertical power DMOS; peak current tolerance; power dissipation capability; process innovation; ruggedness improvement; safe operating range; superior ruggedness; Diode lasers; Erbium-doped fiber lasers; Laser beams; Molecular beam epitaxial growth; Optical waveguides; Planarization; Power generation; Quantum well lasers; Threshold current; Waveguide lasers;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.158704

Filename

158704