Packaging-Induced Strain Measurement Based on the Degree of Polarization in GaAsP–GaInP High-Power Diode Laser Bars

Author

Wang, Ye ; Qin, Li ; Zhang, Yan ; Tian, Zhenhua ; Yang, Ye ; Li, Zaijin ; Wang, Chao ; Yao, Di ; Yin, Honghe ; Liu, Yun ; Wang, Lijun

Author_Institution

Lab. of Excited State Processes, Chinese Acad. of Sci., Changchun

Volume

21

Issue

14

fYear

2009

fDate

7/15/2009 12:00:00 AM

Firstpage

963

Lastpage

965

Abstract

The strain caused by device packaging was studied in high-power semiconductor laser bars by measuring the degree of polarization. Polarization measurement with intentionally GaAsP-GaInP strained laser bar packaged on a Cu heat sink for 799-nm emission revealed the variation of band edges between the conduction band and heavy-hole or light-hole bands in the active region. This served as a method for evaluating the strain. In the packaging process, a maximum of 1800-ppm strain was transmitted to the active region. It was found that the defect density of 14.3% was induced.

Keywords

III-V semiconductors; copper; gallium arsenide; gallium compounds; heat sinks; indium compounds; packaging; polarisation; semiconductor lasers; strain measurement; GaAsP-GaInP; conduction band; diode laser bars; heat sink; high-power bars; packaging induced strain measurement; polarization; semiconductor laser bars; Laser modes; semiconductor device packaging; semiconductor laser arrays; strain measurement;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2009.2021148

Filename

4909009