Device simulation of charge collection and single-event upset

Author

Dodd, Paul E.

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

Volume

43

Issue

2

fYear

1996

fDate

4/1/1996 12:00:00 AM

Firstpage

561

Lastpage

575

Abstract

In this paper we review the current status of device simulation of ionizing-radiation-induced charge collection and single-event upset (SEU), with an emphasis on significant results of recent years. We present an overview of device-modeling techniques applicable to the SEU problem and the unique challenges this task presents to the device modeler. We examine unloaded simulations of radiation-induced charge collection in simple p/n diodes, SEU in dynamic random access memories (DRAM´s), and SEU in static random access memories (SRAM´s). We conclude with a few thoughts on future issues likely to confront the SEU device modeler

Keywords

CMOS memory circuits; DRAM chips; SRAM chips; discrete event simulation; electronic engineering computing; radiation effects; radiation hardening (electronics); semiconductor device models; semiconductor diodes; space vehicle electronics; 2D; 3D; DRAM; SRAM; Si CMOS; charge collection; computational modelling; device-modeling; digital simulation; dynamic random access memories; ionizing-radiation-induced charge collection; p/n diodes; single-event upset; space environment; static random access memories; unloaded simulations; Circuit simulation; Costs; DRAM chips; Educational institutions; Ionizing radiation; Numerical models; Predictive models; Radiation effects; Single event upset; Space technology;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.490901

Filename

490901