Title :
Multisubband Monte Carlo Study of Transport, Quantization, and Electron-Gas Degeneration in Ultrathin SOI n-MOSFETs
Author :
Lucci, Luca ; Palestri, Pierpaolo ; Esseni, David ; Bergagnini, Lorenzo ; Selmi, Luca
Author_Institution :
Dipt. di Ingegneria Elettrica, Gestionale, e Meccanica, Udine Univ.
fDate :
5/1/2007 12:00:00 AM
Abstract :
This paper presents a new self-consistent multisubband Monte Carlo model for electronic transport in the inversion layer of decananometric MOSFETs. The simulator is 2D in real space and in k-space and accounts for the electron-gas degeneracy in the k-space. Simulation of nanoscale ultra-thin-body silicon-on-insulator MOSFETs shows that the subband structure and the carrier degeneracy strongly affect the transport properties and, in particular, the injection velocity and the channel back-scattering
Keywords :
MOSFET; Monte Carlo methods; electron gas; semiconductor device models; silicon-on-insulator; carrier degeneracy; channel back-scattering; decananometric MOSFET; electron-gas degeneration; electronic transport; inversion layer; multisubband Monte Carlo method; nanoscale ultrathin-body silicon-on-insulator MOSFET; subband structure; ultrathin SOI n-MOSFET; Ballistic transport; Crystalline materials; Electrons; Electrostatics; MOSFET circuits; Monte Carlo methods; Particle scattering; Predictive models; Quantization; Silicon on insulator technology; Back-scattering; MOSFETs; Monte Carlo (MC) method; ballistic transport; scattering; semiconductor device modeling; silicon-on-insulator (SOI);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2007.894606
