Electrical Manipulation of Spin Precession in an InGaAs-Based 2DEG Due to the Rashba Spin-Orbit Interaction

Author

Nitta, Junsaku ; Bergsten, Tobias

Author_Institution

Dept. of Mater. Sci., Tohoku Univ., Sendai

Volume

54

Issue

5

fYear

2007

fDate

5/1/2007 12:00:00 AM

Firstpage

955

Lastpage

960

Abstract

The paper demonstrates a spin interference effect in small arrays of mesoscopic InGaAs rings, which is the time reversal Aharonov-Casher effect. Spin-orbit interaction parameters obtained from the spin interference are consistent with those estimated from Shubnikov-de Haas analysis. This result shows evidence for electrical manipulation of the spin precession angle in an InGaAs 2-D electron gas channel. The precession rate was controlled in a precise and predictable way with an electrostatic gate

Keywords

III-V semiconductors; Shubnikov-de Haas effect; field effect transistors; gallium compounds; indium compounds; magnetoelectronics; mesoscopic systems; spin-orbit interactions; two-dimensional electron gas; wide band gap semiconductors; 2D electron gas channel; 2DEG; InGaAs; Rashba spin-orbit interaction; Shubnikov-de Haas analysis; electrostatic gate; mesoscopic rings; spin interference effect; spin precession electrical manipulation; time reversal Aharonov-Casher effect; Electrodes; Electrons; Giant magnetoresistance; Indium gallium arsenide; Interference; Laboratories; Magnetic fields; Magnetization; Materials science and technology; Voltage control; Aharonov–Casher effect; InGaAs 2DEG; Rashba spin-orbit interaction (SOI); spin precession;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2007.894370

Filename

4160126