Title :
Electrical Manipulation of Spin Precession in an InGaAs-Based 2DEG Due to the Rashba Spin-Orbit Interaction
Author :
Nitta, Junsaku ; Bergsten, Tobias
Author_Institution :
Dept. of Mater. Sci., Tohoku Univ., Sendai
fDate :
5/1/2007 12:00:00 AM
Abstract :
The paper demonstrates a spin interference effect in small arrays of mesoscopic InGaAs rings, which is the time reversal Aharonov-Casher effect. Spin-orbit interaction parameters obtained from the spin interference are consistent with those estimated from Shubnikov-de Haas analysis. This result shows evidence for electrical manipulation of the spin precession angle in an InGaAs 2-D electron gas channel. The precession rate was controlled in a precise and predictable way with an electrostatic gate
Keywords :
III-V semiconductors; Shubnikov-de Haas effect; field effect transistors; gallium compounds; indium compounds; magnetoelectronics; mesoscopic systems; spin-orbit interactions; two-dimensional electron gas; wide band gap semiconductors; 2D electron gas channel; 2DEG; InGaAs; Rashba spin-orbit interaction; Shubnikov-de Haas analysis; electrostatic gate; mesoscopic rings; spin interference effect; spin precession electrical manipulation; time reversal Aharonov-Casher effect; Electrodes; Electrons; Giant magnetoresistance; Indium gallium arsenide; Interference; Laboratories; Magnetic fields; Magnetization; Materials science and technology; Voltage control; Aharonov–Casher effect; InGaAs 2DEG; Rashba spin-orbit interaction (SOI); spin precession;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2007.894370
