MSM waveguide photodetectors optimized for monolithic integration with high electron mobility transistors

This paper describes the design of two types of MSM photodetectors, one with interdigitated fingers running across a waveguide and one with electrodes running alongside the waveguide ridge. Both detectors employ the same layer structure as well-characterized high electron mobility transistors (HEMT´s) for ease of integration. Resistive loss at the electrode surface, radiation loss into the substrate, and scattering loss are all accounted for in the optimization for internal detection efficiency of these 50 GHz detectors