Low series resistance continuously graded mirror multiple quantum-well vertical-cavity surface-emitting lasers grown by MOCVD

Author

Zhou, Peng ; Cheng, James ; Schaus, C.F. ; Sun, S.Z. ; Hains, C. ; Hsin, W. ; Chen, Ci ; Myers, D.R. ; Vawter, G. Allen ; Olbright, G.R.

Author_Institution

Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM

Volume

38

Issue

12

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

2697

Lastpage

2698

Abstract

Summary form only given. Room-temperature, CW operation of GaAs/AlGaAs multiple-quantum-well vertical-cavity surface-emitting lasers (VCSELs) with continuously graded mirror layers grown by MOCVD is reported. Continuous grading of the heterojunction interfaces in the heavily doped p-type distributed Bragg reflector (DBR) layers significantly reduced the diode resistance and self-heating, thus leading to higher power efficiencies, a wider CW current range, and a light output that is comparable to the MBE results. The VCSEL epilayer structure, grown by a low-pressure MOCVD system, is composed of an undoped four-quantum-well active layer structure bounded by Te-doped and C-doped DBR mirrors, containing 43.5 and 24 pairs of quarter-wave AlAs and AlGaAs layers, respectively

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; laser cavity resonators; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; AlAs-AlGaAs; GaAs-AlGaAs; MOCVD; VCSEL epilayer structure; VCSELs; continuously graded mirror layers; distributed Bragg reflector; higher power efficiencies; light output; low series resistance; multiple-quantum-well; quarter-wave layers; room temperature CW operation; semiconductors; vertical-cavity surface-emitting lasers; Diodes; Distributed Bragg reflectors; Gallium arsenide; Heterojunctions; MOCVD; Mirrors; Quantum well devices; Surface emitting lasers; Surface resistance; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.158713

Filename

158713