DocumentCode
812170
Title
Transistor critical sizing in MOBILE follower
Author
Quintana, J.M. ; Avedillo, M.J.
Author_Institution
IMSE-CNM, Univ. de Sevilla, Spain
Volume
41
Issue
10
fYear
2005
fDate
5/12/2005 12:00:00 AM
Firstpage
583
Lastpage
584
Abstract
Analyses are presented of how the presence of the HFET transistor modifies the DC operation of a resonant tunnelling logic follower MOBILE. The difficulty of an analytical study for the resulting circuit has been overcome by resorting to simplified descriptions for both the RTD and the HFET I-V characteristics. We have obtained an analytical expression for the relation of the ratio of gate width to the gate length of the HFET below which a theoretically well designed follower does not operate correctly.
Keywords
field effect transistors; logic design; logic gates; resonant tunnelling diodes; DC operation; HFET transistor; I-V characteristics; MOBILE follower; gate length; gate width; resonant tunelling diode; resonant tunnelling logic follower; transistor critical sizing;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20050388
Filename
1432530
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