Bistability and optical switching in an AlAs-GaAs-InGaAs vertical-cavity surface-emitting laser

Author

Deppe, Dennis G. ; Lei, Changhui ; Lee, W.D. ; Rogers, T.J. ; Campbell, Joe C. ; Streetman, B.G.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX

Volume

38

Issue

12

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

2699

Abstract

Summary form only given. Low-threshold (2-4-mA) quantum-well vertical-cavity surface-emitting lasers with high output powers (>1 mW) have been achieved. These lasers exhibit bistability at the onset of lasing. Switching between the on and off states can be achieved optically with optical signal levels as low as 200 μW. Arrays of these lasers have the potential for all-optical memories and optical logic elements

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser cavity resonators; optical bistability; optical logic; optical storage; optical switches; semiconductor junction lasers; semiconductor laser arrays; 1 mW; 2 to 4 mA; 200 muW; AlAs-GaAs-InGaAs; VCSEL; all-optical memories; bistability; hysteresis; laser arrays; optical logic elements; optical signal levels; optical switching; optically switched lasers; output powers; quantum-well; semiconductors; threshold current; vertical-cavity surface-emitting lasers; Laser feedback; Optical bistability; Optical devices; Optical feedback; Photodetectors; Photodiodes; Semiconductor lasers; Stimulated emission; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.158716

Filename

158716