DocumentCode :
812219
Title :
Three-terminal DOES lasers with exceptionally low threshold currents
Author :
Taylor, Graham W. ; Claisse, P.R. ; Doctor, D.P. ; Cooke, Patrick
Author_Institution :
AT&T Bell Lab., Holmdel, NJ
Volume :
38
Issue :
12
fYear :
1991
fDate :
12/1/1991 12:00:00 AM
Firstpage :
2700
Lastpage :
2701
Abstract :
Summary form only given. The double-heterostructure optoelectronic switch (DOES) structure is an attractive device for optical computing and optical signal processing functions. These devices have recently been demonstrated with a third terminal contact to the inversion channel, which provides a high-impedance input node and allows fast switching for both on and off transitions. Using the third terminal, the electrical turn-on delay is 350 ps and switching into and out of the upper lasing state to 1.4Ith was measured with delay plus transition times of 200 ps, corresponding to the limiting speed of the 10 μm inversion channel. The source in/out current was 5 mA and switching into lasing was achieved to 1.75Ith
Keywords :
optical information processing; optical switches; semiconductor junction lasers; semiconductor switches; 10 micron; 200 to 350 ps; 5 mA; DOES lasers; double-heterostructure optoelectronic switch; electrical turn-on delay; fast switching; high-impedance input node; inversion channel; limiting speed; low threshold currents; off transitions; optical computing; optical signal processing; source current; switching into lasing; switching upper lasing state; third terminal contact; three terminal DOES lasers; Diode lasers; Distributed Bragg reflectors; Gallium arsenide; Mirrors; Optical scattering; Photodetectors; Photodiodes; Power lasers; Spontaneous emission; Threshold current;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.158719
Filename :
158719
Link To Document :
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