DocumentCode
812236
Title
Effects of nitric oxide annealing of thermally grown silicon dioxide characteristics
Author
Yao, Z.-Q. ; Harrison, H.B. ; Dimitrijev, S. ; Yeow, Y.T.
Author_Institution
AEA Microelectron Pty Ltd., Sydney, NSW, Australia
Volume
16
Issue
8
fYear
1995
Firstpage
345
Lastpage
347
Abstract
The effects of nitric oxide (NO) annealing on conventional thermal oxides are reported in this letter. The oxide thickness increase, resulting from NO annealing, is found to be only a few angstroms (<0.5 nm) and independent on the initial oxide thickness. Furthermore, both the electrical and physical characteristics are improved. This technique is expected to achieve sub-5 nm high quality ultrathin dielectric films for the applications in EEPROM´s and ULSI.<>
Keywords
EPROM; MOS capacitors; MOS integrated circuits; ULSI; annealing; dielectric thin films; integrated circuit technology; EEPROM; MOS capacitors; NO; SiO/sub 2/; ULSI; electrical characteristics; gate dielectrics; nitric oxide annealing; oxide thickness increase; physical characteristics; thermal oxides; ultrathin dielectric films; Annealing; Australia; Dielectric films; Dielectric measurements; Dielectric substrates; EPROM; Microelectronics; Nitrogen; Refractive index; Silicon compounds;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.400733
Filename
400733
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