High-temperature pulsed operation of InGaAsP/InP surface emitting lasers

Author

Wada, Hiroyuki ; Babic, D.I. ; Crawford, D.L. ; Dudley, John J. ; Bowers, John E. ; Hu, E.L. ; Merz, J.L. ; Miller, B.I. ; Koren, U. ; Young, Matthew G.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA

Volume

38

Issue

12

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

2701

Abstract

Summary form only given. The observation of above-room-temperature pulsed operation of 1.3-μm InGaAsP/InP vertical-cavity surface emitting lasers (VCSELs) is reported. Lasing operation was successfully achieved up to temperatures as high as 66°C. The threshold current at 20°C was only 50 mA, which is much lower than that previously reported (150 mA) for VCSELs in this material system. The VCSEL structure is the polyimide-embedded constricted mesa structure with an undercut active layer formed using a selective chemical etchant. The laser cavity consists of a 1.5-μm-thick p-InP cladding layer, a 0.6-μm p-InGaAsP active layer, and a 2-μm n-InP cladding layer grown by MOVPE on a p-type InP substrate

Keywords

III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; vapour phase epitaxial growth; 0.6 micron; 1.3 micron; 20 to 66 C; 50 mA; InGaAsP-InP; InP substrate; MOVPE; above-room-temperature pulsed operation; cladding layer; high temperature pulsed operation; laser cavity; polyimide-embedded constricted mesa structure; selective chemical etchant; semiconductors; threshold current; undercut active layer; vertical-cavity surface emitting lasers; Chemical lasers; Epitaxial growth; Etching; Indium phosphide; Optical materials; Optical pulses; Surface emitting lasers; Temperature; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.158721

Filename

158721