Title :
0.33-μm millimeter-wave InP-channel HEMTs with high f T and fmax
Author :
Aina, L. ; Burgess, Mark ; Mattingly, M. ; O´Connor, J. ; Tong, Michael ; Ketterson, Andrew ; Adesida, I.
Author_Institution :
Allied-Signal Aerosp. Co., Columbia, MD
fDate :
12/1/1991 12:00:00 AM
Abstract :
Summary form only given. The fabrication of 0.33-μm AlInAs/InP HEMTs is reported. These InP-channel devices have fT´s as high as 76 GHz and fmax of 146 GHz, with extrinsic DC transconductances as high as 610 mS/mm and microwave gains of 12 dB at 30 GHz. Measured breakdown voltages, which exceed 10 V, are higher than those reported for similarly structured InGaAs-channel devices, as was the fT-Lg product, which was estimated to be as high as 29 GHz-μm. It is demonstrated that AlInAs/InP HEMTs have potential for both high-power microwave and high-speed and high-frequency millimeter-wave applications
Keywords :
III-V semiconductors; aluminium compounds; high electron mobility transistors; indium compounds; solid-state microwave devices; 0.33 micron; 10 V; 12 dB; 146 GHz; 30 GHz; 76 GHz; AlInAs-InP; EHF; HEMTs; InP-channel devices; breakdown voltages; extrinsic DC transconductances; fT; fmax; fabrication; high-frequency millimeter-wave applications; high-power microwave; microwave devices; microwave gains; millimeter-wave; semiconductors; Electron devices; Gallium arsenide; HEMTs; MODFETs;
Journal_Title :
Electron Devices, IEEE Transactions on
