Title :
Low-noise amplifier in 0.12 μm standard CMOS technology for K-band
Author :
Basaran, U. ; Tao, R. ; Wu, L. ; Berroth, M.
Author_Institution :
Inst. of Electr. & Opt. Commun. Eng., Univ. of Stuttgart, Germany
fDate :
5/12/2005 12:00:00 AM
Abstract :
A K-band CMOS low-noise amplifier with a noise figure of 4.26 dB and a peak gain of 18.86 dB is presented. The low-noise amplifier has a peak gain frequency of 20.3 GHz and an input referred 1 dB compression point of -16 dBm. These are believed to be the lowest noise figure and highest gain values reported to date at these frequencies in a standard CMOS technology.
Keywords :
CMOS integrated circuits; microwave amplifiers; 0.12 micron; 18.86 dB; 20.3 GHz; 4.26 dB; CMOS technology; K-band amplifier; low-noise amplifier; noise figure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20050237
