• DocumentCode
    812255
  • Title

    Low-noise amplifier in 0.12 μm standard CMOS technology for K-band

  • Author

    Basaran, U. ; Tao, R. ; Wu, L. ; Berroth, M.

  • Author_Institution
    Inst. of Electr. & Opt. Commun. Eng., Univ. of Stuttgart, Germany
  • Volume
    41
  • Issue
    10
  • fYear
    2005
  • fDate
    5/12/2005 12:00:00 AM
  • Firstpage
    592
  • Lastpage
    593
  • Abstract
    A K-band CMOS low-noise amplifier with a noise figure of 4.26 dB and a peak gain of 18.86 dB is presented. The low-noise amplifier has a peak gain frequency of 20.3 GHz and an input referred 1 dB compression point of -16 dBm. These are believed to be the lowest noise figure and highest gain values reported to date at these frequencies in a standard CMOS technology.
  • Keywords
    CMOS integrated circuits; microwave amplifiers; 0.12 micron; 18.86 dB; 20.3 GHz; 4.26 dB; CMOS technology; K-band amplifier; low-noise amplifier; noise figure;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20050237
  • Filename
    1432536