Ionizing radiation tolerance and low-frequency noise degradation in UHV/CVD SiGe HBT´s

Author

Babcock, Jeffrey A. ; Cressler, John D. ; Vempati, Lakshmi S. ; Clark, Steven D. ; Jaeger, Richard C. ; Harame, David L.

Author_Institution

Dept. of Electr. Eng., Auburn Univ., AL, USA

Volume

16

Issue

8

fYear

1995

Firstpage

351

Lastpage

353

Abstract

The effect of ionizing radiation on both the electrical and 1/f noise characteristics of advanced UHV/CVD SiGe HBT´s is reported for the first time. Only minor degradation in the current-voltage characteristics of both SiGe HBT´s and Si BJT´s is observed after total radiation dose exposure of 2.0 Mrad(Si) of gamma-radiation. The observed immunity to ionizing radiation exposure suggests that these SiGe HBT´s are well suited for many applications requiring radiation tolerance. We have also observed the appearance of ionizing-radiation-induced generation-recombination (G/R) noise in some of these SiGe HBT´s.<>

Keywords

1/f noise; Ge-Si alloys; chemical vapour deposition; electron-hole recombination; gamma-ray effects; heterojunction bipolar transistors; radiation hardening (electronics); semiconductor device noise; semiconductor materials; 1/f noise characteristics; 2.0 Mrad; HBT; SiGe; UHV/CVD; current-voltage characteristics; gamma-radiation; generation-recombination noise; ionizing radiation tolerance; low-frequency noise degradation; radiation tolerance; total radiation dose exposure; Cranes; Degradation; Epitaxial layers; Germanium silicon alloys; Heterojunction bipolar transistors; Ionizing radiation; Low-frequency noise; Manufacturing; Microelectronics; Silicon germanium;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.400735

Filename

400735