Title :
InP-based inverted high electron mobility transistors
Author :
Schmitz, A.E. ; Nguyen, L.D. ; Brown, A.S. ; Metzger, R.A.
Author_Institution :
Hughes Res. Lab., Malibu, CA
fDate :
12/1/1991 12:00:00 AM
Abstract :
Summary form only given. The fabrication and characterisation of an inverted high-electron-mobility transistor (HEMT) in the AlInAs/GaInAs-on-InP material system are reported. Inverted HEMTs, which have the donor layer beneath the channel, have the potential for higher transconductance, current gain cutoff frequency, and power gain cutoff frequency than conventional HEMTs because the gate can be placed closer to the two-dimensional electron gas (2DEG)
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; AlInAs-GaInAs; InP substrate; characterisation; current gain cutoff frequency; donor layer beneath channel; fabrication; inverted HEMTs; microwave devices; power gain cutoff frequency; semiconductors; transconductance; Electron devices; Gallium arsenide; HEMTs; MODFETs;
Journal_Title :
Electron Devices, IEEE Transactions on
