Enhancement of mobility in pseudomorphic FETs with up and down monolayers

Author

Goronkin, H. ; Tehrani, S. ; Droopad, Ravi ; Maracas, G.N. ; Shen, Jianbing

Author_Institution

Motorola Inc., Tempe, AZ

Volume

38

Issue

12

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

2703

Abstract

Summary form only given. A comparison was made between three pseudomorphic FET channels. The control sample was a strained In_0.15Ga_0.85As quantum well bounded by undoped Al _0.3Ga_0.7As and GaAs with a 50-Å Al_0.3Ga_0.7As spacer and 5×10¹² Si planar doping. The second structure was identical to the first except one GaAs monolayer was replaced with one down monolayer. The third quantum well had one InAs down monolayer and two AlAs up monolayers positioned to increase the intersubband energy between the ground state and the next two states. The mobility was measured as a function of temperature from about 40 to 340 K for these structures. Some results are discussed

Keywords

III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor quantum wells; 40 to 340 K; 50 A; AlAs up monolayers; In_0.15Ga_0.85As quantum well; InAs down monolayer; InGaAs-AlGaAs; InGaAs-GaAs; mobility enhancement; monolayer quantum barriers; monolayer quantum wells; pseudomorphic FET channels; semiconductors; Electrons; Energy states; FETs; Gallium arsenide; Indium compounds; Indium gallium arsenide; Laboratories; Photonic band gap; Stationary state; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.158724

Filename

158724